[11p-E208-1~10] 10.3 Spin devices, magnetic memories and storages

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)English Presentation

[11p-E208-10] Modified TMR and non-linear VCMA effect in Cr/Fe/Ir/MgO MTJs with Fe quantum well

〇Thomas Scheike¹, Tomohiro Nozaki¹, Takayuki Nozaki¹, Shinji Yuasa¹ (1.AIST)

Keywords:

spintronics,MTJ,quantum well

The results of single-crystalline Cr/Fe/Ir/Co/MgO MTJs with a Fe quantum well (QW) at room temperature and its effect on the bias voltage dependence of TMR and the VCMA effect are shown. The effect of Ir insertion on the QW is measured. A significant modulation of the TMR with respect to bias voltage depending on the Fe thickness was observed together with a non-linear modulation of the commonly linear VCMA effect. After Ir insertion the QW remains but with reduced signal.