Session Details

[11p-E208-1~10]10.3 Spin devices, magnetic memories and storages

Fri. Sep 11, 2026 1:30 PM - 4:15 PM JST
Fri. Sep 11, 2026 4:30 AM - 7:15 AM UTC
E208 (First Year Education Bld. E Block)

[11p-E208-1]Fabrication of nanojunctions using fullerene and their structural, electrical and magnetic properties

〇Koki Terai1, Mizuki Matsuzaka1, Takumi Ueda1, Hideo Kaiju1,2 (1.Keio Univ., 2.CSRN, Keio Univ.)

[11p-E208-2]Co/Pt-based synthetic antiferromagnets pinned by perpendicular exchange bias for wide-dynamic-range tunnel-magnetoresistance sensors

〇Takafumi Nakano1,2, Saki Ushida3, Kenta Watanabe1, Taichi Okamoto3, Mikihiko Oogane1,4 (1.Tohoku Univ., 2.Green X-Tech., 3.Asahi Kasei Microdevices Corp., 4.CSIS)

[11p-E208-3]Tunnel-magnetoresistance sensor using nanocrystalline Fe-B-Cu alloy thin films as flux concentrators

〇Yichen Wang1, Miyaura Tomoko1, Oogane Mikihiko1,2, Nakano Takafumi1,3 (1.Tohoku Univ, 2.Tohoku Univ CSIS, 3.Tohoku Univ. Green X-Tech)

[11p-E208-4]Remote Detection and Machine Learning Classification of Magnetization Patterns Using Magnetoresistive Sensor Array

〇Takahide Kubota1, Takayuki Hojo1, Kosuke Fujiwara2, Motoki Endo1, Hayato Fukushima2, Takashi Yoshidome1, Hitoshi Matsuzaki2, Ikuro Yamane3, Junichi Jinno3, Koji Onishi3, Mikihiko Oogane1, Yasuo Ando1 (1.GSE, Tohoku Univ., 2.Spin Sensing Factory, 3.Otsuka Pharmaceutical)

[11p-E208-5]Deep-Learning-based Classification of 3D Point Clouds of Magetization Patterns Measured by Tunnel Magnetoresistance Sensor

〇Takayuki Hojo1, Takahide Kubota1, Kosuke Fujiwara2, Motoki Endo1, Hayato Fukushima2, Takashi Yoshidome1, Hitoshi Matsuzaki2, Ikuro Yamane3, Jun-ichi Jinno3, Koji Onishi3, Mikihiko Oogane1, Yasuo Ando1 (1.Tohoku Univ., 2.Spin Sensing Factory Inc., 3.Otsuka Pharmaceutical Co. Ltd.)

[11p-E208-6]Development of Analog Magnetization Control Layer for MTJ-Based Analog IC Calibration

〇Takeru Mizoguchi1, Mahfuzul Islam2, Minori Goto3, Yuichiro Ando1 (1.Osaka Metropolitan Univ., 2.Institute of Science Tokyo, 3.Tokyo University of Science)

[11p-E208-7]Memristive magnetic tunnel junctions using a spinodal magnet

〇Tatsuya Yamamoto1, Tomohiro Ichinose1, Jun Uzuhashi2, Sumito Tsunegi1, Takayuki Nozaki1, Tadakatsu Ohkubo2, Shingo Tamaru1, Kay Kakushiji1, Hitoshi Kubota1, Shinji Yuasa1 (1.AIST, 2.NIMS)

[11p-E208-8]Cryogenic temperature deposition of CoFe/Fe stacked top-free layers with high perpendicular magnetic anisotropy and voltage-controlled magnetic anisotropy coefficients

〇Tomohiro Ichinose1, Tatsuya Yamamoto1, Takayuki Nozaki1, Kay Yakushiji1, Shingo Tamaru1, Shinji Yuasa1,2 (1.AIST, 2.Tohoku Univ.)

[11p-E208-9]Enhanced dielectric constant and VCMA effect via MgO/ZnO/MgO tunnel barrier

〇Tomohiro Nozaki1, Hiroshige Onoda1, Shingo Tamaru1, Hiroyasu Nakayama1, Makoto Konoto1, Takayuki Nozaki1, Shinji Yuasa1 (1.AIST)

[11p-E208-10]Modified TMR and non-linear VCMA effect in Cr/Fe/Ir/MgO MTJs with Fe quantum well

〇Thomas Scheike1, Tomohiro Nozaki1, Takayuki Nozaki1, Shinji Yuasa1 (1.AIST)