[11p-E208-1~10] 10.3 Spin devices, magnetic memories and storages

1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)English Presentation

[11p-E208-2] Co/Pt-based synthetic antiferromagnets pinned by perpendicular exchange bias for wide-dynamic-range tunnel-magnetoresistance sensors

〇Takafumi Nakano^1,2, Saki Ushida³, Kenta Watanabe¹, Taichi Okamoto³, Mikihiko Oogane^1,4 (1.Tohoku Univ., 2.Green X-Tech., 3.Asahi Kasei Microdevices Corp., 4.CSIS)

Keywords:

Magnetic sensor,Current sensor,Magnetoresistance

Tunnel-magnetoresistance (TMR) sensors are applicable to high-current sensing, for which they should have a wide dynamic range on the order of 1 kOe. Such a wide dynamic range can be achieved by using perpendicularly magnetizd synthetic antiferromagnets (p-SAFs) as a reference layer. In this study, we developed a p-SAF reference layer pinned by perpendicular exchange bias, therby enabling a TMR sensor with a single-polarity output and a wide synamic range.