Presentation Information
[11p-E208-6]Development of Analog Magnetization Control Layer for MTJ-Based Analog IC Calibration
〇Takeru Mizoguchi1, Mahfuzul Islam2, Minori Goto3, Yuichiro Ando1 (1.Osaka Metropolitan Univ., 2.Institute of Science Tokyo, 3.Tokyo University of Science)
Keywords:
spintronics,Magnetic Tunnel Junction,Analog Integrated Circuit
Device-to-device variations in modern analog ICs generate undesired offset voltages, degrading performance. To address this issue, a dynamically reconfigurable calibration technology using MTJ devices as tunable resistive elements is being developed. Offset-voltage compensation was successfully demonstrated in an op-amp circuit, where the distorted output waveform was restored by analogically controlling the MTJ resistance via an external magnetic field. For practical applications, the MTJ resistance state must be retained non-volatilely, requiring stable control of intermediate magnetic-domain configurations even under operating conditions. While stable intermediate states and magnetic-state retention have been confirmed in Co-SiO2 films, the current focus is on further advancing this technology. In this presentation, the evaluation of a newly fabricated ferromagnetic material will be primarily reported to further optimize and stabilize this analog magnetization control.