[11p-E208-1~10] 10.3 Spin devices, magnetic memories and storages

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)English Presentation

[11p-E208-7] Memristive magnetic tunnel junctions using a spinodal magnet

〇Tatsuya Yamamoto¹, Tomohiro Ichinose¹, Jun Uzuhashi², Sumito Tsunegi¹, Takayuki Nozaki¹, Tadakatsu Ohkubo², Shingo Tamaru¹, Kay Kakushiji¹, Hitoshi Kubota¹, Shinji Yuasa¹ (1.AIST, 2.NIMS)

Keywords:

magnetic tunnel junctions,memristor,Neuromorphic computing

We developed memristive MTJs using spinodal decomposition in Fe-Mn-based data storage layer (SL). Spinodal decomposition allows for the fabrication of self-assembled nanostructures without affecting the crystallinity or the grain size. The fabricated MTJs with an ultrathin Fe-Mn-based SL showed a large room temperature TMR ratio exceeding 130% at room temperature. Furthermore, even when the MTJ diameter was reduced to 200 nm, step-by-step magnetoresistive switching could be controlled via spin-transfer-torque (STT) in the absence of a magnetic field.