[11p-E217-1~8] 16.1 Fundamental properties, evaluation, process and devices in disordered materials

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[11p-E217-7] Carrier Localization-Delocalization Transition in Boron-doped Amorphous Carbon Films Induced by Pulsed Laser Annealing

〇Yuji Muraoka¹, Subaru Nakashima², Daiki Ootsuki¹, Takayoshi Yokoya¹, Kohei Yamagami³ (1.RIIS. Okayama Univ., 2.ELST. Okayama Univ., 3.JASRI/SPring-8)

Keywords:

Boron-doped amoprhous carbon,Pulsed laser annealing,Localization-delocalization transition

By applying pulsed laser annealing to a boron-doped amorphous carbon film, a transition from a localized state to a delocalized state was achieved. Based on electrical resistivity measurements and synchrotron photoelectron spectroscopy measurements, the results of the metallization and the microscopic electronic state in the metallic phase will be presented.