Presentation Information
[11p-E301-1]Flexible In2O3 TFTs with High-Mobility of ~75 cm2 V−1 s−1
〇(DC)Hyeonjun Kong1, Ying-Hao Chu2, Yasutaka Matsuo3, Hiromichi Ohta3 (1.IST-Hokkaido U., 2.National Tsing Hua Univ., 3.RIES-Hokkaido U.)
Keywords:
Thin-Film Transistor,Flexible Electronics
Thin-film transistors (TFTs) are the backbone of modern flat-panel display backplanes, where increasing demands for higher drive current and faster pixel switching are expected to require field-effect mobilities (μFE) exceeding 70 cm2 V−1 s−1. Among candidate channel materials, hydrogen-incorporated In2O3 stands out due to its exceptionally high μFE. We previously fabricated In2O3 TFTs by pulsed laser deposition using In(OH)3 ceramic targets, which supply hydrogen without additional hydrogen gas.
The remaining challenge is to transfer this high-mobility technology from rigid substrates to mechanically flexible platforms without compromising the channel quality needed for high μFE. Conventional flexible substrates typically have thermal limits near 220 °C, which are insufficient for crystallizing high-quality In2O3. To overcome this, we employ mica as a flexible substrate. Mica combines mechanical flexibility, an atomically flat cleavage surface that suppresses roughness-induced carrier scattering, and high thermal stability that permits elevated-temperature processing for large-grain In2O3 formation.
In this work, we demonstrate high-mobility In2O3 TFTs on flexible mica substrates using In(OH)3 targets. The devices exhibit a μFE of ~75 cm2 V−1 s−1, establishing mica as a viable platform for high-performance flexible oxide TFTs. Cyclic bending tests up to 1000 cycles were also performed to assess the mechanical durability of the In2O3 films and clarify the relationship between bending-induced degradation and device characteristics.
The remaining challenge is to transfer this high-mobility technology from rigid substrates to mechanically flexible platforms without compromising the channel quality needed for high μFE. Conventional flexible substrates typically have thermal limits near 220 °C, which are insufficient for crystallizing high-quality In2O3. To overcome this, we employ mica as a flexible substrate. Mica combines mechanical flexibility, an atomically flat cleavage surface that suppresses roughness-induced carrier scattering, and high thermal stability that permits elevated-temperature processing for large-grain In2O3 formation.
In this work, we demonstrate high-mobility In2O3 TFTs on flexible mica substrates using In(OH)3 targets. The devices exhibit a μFE of ~75 cm2 V−1 s−1, establishing mica as a viable platform for high-performance flexible oxide TFTs. Cyclic bending tests up to 1000 cycles were also performed to assess the mechanical durability of the In2O3 films and clarify the relationship between bending-induced degradation and device characteristics.