The 87th JSAP Autumn Meeting 2026
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Oral presentation21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" : 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[11p-E301-1~11]21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Fri. Sep 11, 2026 1:30 PM - 4:30 PM JST
Fri. Sep 11, 2026 4:30 AM - 7:30 AM UTC
E301 (First Year Education Bld. E Block)
1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)English Presentation

[11p-E301-1]Flexible In2O3 TFTs with High-Mobility of ~75 cm2 V−1 s−1

〇(DC)Hyeonjun Kong1, Ying-Hao Chu2, Yasutaka Matsuo3, Hiromichi Ohta3 (1.IST-Hokkaido U., 2.National Tsing Hua Univ., 3.RIES-Hokkaido U.)
1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)English Presentation

[11p-E301-2]Low-Leakage IGZO Contact-Controlled Transistor towards Long Retention Analog Memory

〇(D)Mark Denusta Ilasin1, Juan Paolo Soria Bermundo1, Mutsumi Kimura2, Hidenori Kawanishi1, Senku Tanaka3, Kosuke O. Hara1, Yukiharu Uraoka1 (1.NAIST, 2.Ryukoku Univ., 3.Kindai Univ.)
2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)English Presentation

[11p-E301-3]Impact of Remote Plasma Power on Electrical Characteristics of PEALD AlOx-passivated Ultrathin InOx FETs

〇Chia-Tsong Chen1, Kazuki Ishiyama1,2, Zih-hao DAI3, Kasidit Toprasertpong3, Toshifumi Irisawa1, Tatsuro Maeda1 (1.AIST, 2.Nihon Univ., 3.The Univ. of Tokyo)
2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[11p-E301-4]Effect of AlOx Gate Dielectric Thinning on Bias Stability Improvement in InOx FETs

〇(M2)Kazuki Ishiyama1,2, Chen Chia-Tsong2, Toshifumi Irisawa2, Kasidit Toprasertpong3, Tatsuro Maeda2 (1.Nihon univ., 2.AIST, 3.Tokyo univ.)
2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[11p-E301-5]Static Characteristics of 10 nm Thickness In2O3 Thin Film Transistors Deposited by Mist CVD

〇(M2)Haruki Ishikawa1, Tomohiro Yamaguchi1, Taro Iizuka1, Soma Nshio1, Ikoi Sato1, Yuma Matsufuji1, Yuichiro Ebisawa1, Ryo Ishikawa1, Sinya Aikawa1, Takeyoshi Onuma1, Tohru Honda1 (1.Kogakuin univ.)
2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[11p-E301-6]High-Temperature Operation and Hydrogen Gas Response of Amorphous Gallium Oxide Thin-Film Transistors

〇Rio Oshita1, Keisuke Ide1, Takayoshi Katase1,2, Hidenori Hiramatsu1,2, Toshio Kamiya1 (1.MDXES, Science Tokyo, 2.MSL, Science Tokyo)
3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[11p-E301-7]Transport Property of IGZO Bulk Single Crystals with different number of ZnO layers

〇Ryoto Yanagisawa1, Momoka Hirai1, Maaya Yoshida1, Ryotaro Kokai1, Nobuaki Miyakawa1 (1.Tokyo Univ. of Sci.)
3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[11p-E301-8]Transport Properties Control of IGZTO Bulk Single Crystals with Site-Selective Sn Substitution

〇(M1)Taiki Kouyama1, Maaya Yosida1, Momoka Hirai1, Kokai Ryotaro1, Yanagisawa Ryoto1, Miyakawa Nobuaki1 (1.Tokyo Univ. of Sci.)
3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[11p-E301-9]Effect of Ar:N2:O2 Flow Rate Ratio on the Electrical Properties of Ag, N-Codoped ZnO Thin Films

〇Shu Yokoyama1, Hiroshi Katsumata1 (1.Meiji Univ.)
4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[11p-E301-10]Effects of Al Doping Concentration on the Properties of AZO Thin Films Prepared by RF Reactive Co-Sputtering Using a Zn Target

〇Toshitaka Hayashi1, Hiroshi Katsumata1 (1.Meiji Univ.)
4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[11p-E301-11]Suppressin of Excessive Reduction via Capping Layer for SnO Formation from SnO2

〇Shion Kawasaki1, Shin Yoshikazu1, Aikawa Shinya1 (1.Kogakuin Univ)
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