Presentation Information
[11p-E301-3]Impact of Remote Plasma Power on Electrical Characteristics of PEALD AlOx-passivated Ultrathin InOx FETs
〇Chia-Tsong Chen1, Kazuki Ishiyama1,2, Zih-hao DAI3, Kasidit Toprasertpong3, Toshifumi Irisawa1, Tatsuro Maeda1 (1.AIST, 2.Nihon Univ., 3.The Univ. of Tokyo)
Keywords:
oxide semiconductor,ultrathin body channel,bias stability
Recently, In-based oxide semiconductors (OSs) as channel materials received much attention due to high drivability and low current leakage. However, a meticulous control on amount of oxygen vacancies within OSs is essential. We have reported that inappropriate oxygen annealing causes electrical degradation in AlOx-passivated InOx FETs due to excess oxygen incorporation. In this study, we change the PEALD plasma power during InOx deposition to study the impact of incorporating oxygen on electrical properties and bias stability of InOx FETs.