Presentation Information
[11p-E308-5]Interlayer exciton emission trapped by the Moiré potential in MoSe2/MoS2 heterobilayers
〇Yuki Izumi1, Satoru Adachi1, Reina Kaji1, S.-C. Lin2, H.-W. Ting2, W.-H. Chang2 (1.Hokkaido univ, 2.NYCU)
Keywords:
Hetero bilayer,Interlayer exciton,moire superlattice
Interlayer excitons (IX) formed in transition metal dichalcogenide heterostructures are strongly affected by trapping in the moire potential. In this work, we investigate the emission properties of moire-trapped IX in MoSe2/MoS2 heterobilayers by combining excitation-power and temperature dependence with time-resolved and circularly-polarized PL measurements. The power-law exponent of the integrated IX-PL intensity is 0.49 at 6 K and 1.02 at room temperature; the sublinear behavior at low temperature reflects trapping in the moire potential, while the linear response at room temperature indicates thermal escape. For two flakes with different potential depths, we observe a blueshift (44 meV) and a high-energy linewidth broadening (55 meV), both consistently understood in terms of the moire potential depth. In the presentation, time-resolved lifetimes and valley polarization further refine the picture of moire-trapped interlayer excitons.