Session Details

[11p-E308-1~10]17.2 Fundamental properties

Fri. Sep 11, 2026 1:30 PM - 4:00 PM JST
Fri. Sep 11, 2026 4:30 AM - 7:00 AM UTC
E308 (First Year Education Bld. E Block)

[11p-E308-1]Layer number dependence of dielectric screening effects in WSe2
probed with broadband sum-frequency-generation spectroscopy

〇Shintaro Megumi1, Satoshi Kusaba1,2, Jun Takeda1,3, Takashi Taniguchi4, Kenji Watanabe4, Kazuhiro Yanagi2, Hirokazu Tahara1, Ikufumi Katayama1 (1.Dept. of Phys., Yokohama Natl. Univ., 2.Dept. of Phys., Tokyo Metro. Univ., 3.Shibaura Inst. of Tech., 4.NIMS)

[11p-E308-2]Spatially Resolved Observation of exciton-plasmonic structures using Ag nanowires/MoS2

〇(M1)Taichi Watanabe1, Hiroyuki Mogi1, Shiki Nakayama1, Yusuke Arashida1, Shoji Yoshida1, Osamu Takeuchi1, Hidemi Shigekawa1 (1.Tsukuba Univ.)

[11p-E308-3]Variation of interlayer exciton states by improved vacuum transfer procedures using a gold-assisted PDMS transfer method

〇(M2)Shiki Nakayama1, Hiroyuki Mogi1, Taichi Watanabe1, Yusuke Arashida1, Shoji Yoshida1, Osamu Takeuchi1, Hidemi Shigekawa1 (1.Tsukuba Univ.)

[11p-E308-4]Transient interlayer exciton dynamics on WS2/WSe2 heterobilayer

〇Ryo Tamaki1,2, Zhiwei Li3, Shinichiro Matano3, Kenji Watanebe4, Takashi Taniguchi4, Kazunari Matsuda3, Junko Ishi-Hayase1,2 (1.Keio Univ., 2.Keio CSRN, 3.IAE, Kyoto Univ., 4.NIMS)

[11p-E308-5]Interlayer exciton emission trapped by the Moiré potential in MoSe2/MoS2 heterobilayers

〇Yuki Izumi1, Satoru Adachi1, Reina Kaji1, S.-C. Lin2, H.-W. Ting2, W.-H. Chang2 (1.Hokkaido univ, 2.NYCU)

[11p-E308-6]Enhanced dark exciton emission of WSe2 monolayers by a suspended structure

〇Keigo Matsuyama1, Giacomo Mariani1, Xuejun Xu1, Taro Wakamura1, Satoshi Sasaki1, Makoto Kohda2,3,4, Junsaku Nitta1,2, Haruki Sanada1 (1.NTT-BRL, 2.Tohoku Univ., 3.CSIS, 4.QST)

[11p-E308-7]Chirality and Circular Photogalvanic Effect Induced by Stacking Order in ReSe2

〇(D)Ryo Nanae1, Wong Cheng Quan2, Chen Mingjun2, Yi Wei Ho2, Zdenek Sofer3, Kenji Watanabe4, Takashi Taniguchi4, Kosuke Nagashio1, Goki Eda2 (1.UT, 2.NUS, 3.UCT Prague, 4.NIMS)

[11p-E308-8]Comparison of work function of single-layer MoS2 and band offset with oxides in various references

〇Michiko Yoshitake1, Takahiro Nagata1 (1.NIMS)

[11p-E308-9]Study of Structural Changes at the Single-Layer MoS2/Sapphire Interface Using Ambient Pressure Hard X-ray Photoelectron Spectroscopy with Hydrogen Gas

〇Takahiro Nagata1, Yoshiki Sakuma1, Ibrahima Gueye2, Yasumasa Takagi2, Masaaki Kobata3, Tatsuo Fukuda3, Jun Nara1, Juiteng Chang4, Tomonori Nishimura4, Kaito Kanahashi4, Kosuke Nagashio4 (1.NIMS, 2.JASRI, 3.JAEA, 4.The Univ. of Tokyo)

[11p-E308-10]Short-Range Order in High-Entropy Transition Metal Dichalcogenide by Transition Electron Microscopy

〇(M1)Arata Yano1, Kengo Miyata1, Daigorou Hirai1, Koshi Takenaka1, Koh Saitoh1,2 (1.Nagoya Univ., 2.IMaSS., Nagoya Univ.)