Presentation Information
[11p-E308-7]Chirality and Circular Photogalvanic Effect Induced by Stacking Order in ReSe2
〇(D)Ryo Nanae1, Wong Cheng Quan2, Chen Mingjun2, Yi Wei Ho2, Zdenek Sofer3, Kenji Watanabe4, Takashi Taniguchi4, Kosuke Nagashio1, Goki Eda2 (1.UT, 2.NUS, 3.UCT Prague, 4.NIMS)
Keywords:
Semiconductor,Transition metal dichalcogenides,Berry curvature dipole
The symmetry of a crystal governs physical properties such as the photogalvanic effect (PGE). Specifically, the emergence of the circular PGE (CPGE) requires a particular symmetry breaking. While monolayer ReSe2 exhibits inversion symmetry in its most stable structure, a metastable stacking order breaks this symmetry, leading to the theoretical expectation of CPGE, which remains experimentally unverified. This study aims to demonstrate CPGE in non-centrosymmetric ReSe2 and clarify the correlation between its optical responses and stacking order.