[11p-E310-1~11] 3.11 Nanoscale optical science and near-field optics

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[11p-E310-5] Critical-Dimension Correction for Sidewall-Angle Errors in 1580 nm Si Resonant Metasurfaces

〇YUANHAO JIANG¹, Tomohiro Maeda¹, Hideyuki Sotobayashi¹ (1.Aoyama Gakuin Univ.)

Keywords:

metasurface

We analyzed an a-Si resonant unit cell with a transmission dip near 1580 nm to evaluate the effect of sidewall-angle errors on the resonance wavelength. The exposure CD was treated as the top dimension Dtop, with the baseline Dtop=640 nm. FDTD simulations showed that the dip wavelength shifted to the longer-wavelength side for α<0 and to the shorter-wavelength side for α>0 when Dtop was fixed. We then searched for the Dtop value required to restore λdip to 1580 nm. The required exposure-CD correction ΔDtop,opt was -83.1 nm at α=-10° and +95.9 nm at α=+10°. These results indicate that the resonance wavelength can be pre-compensated at the exposure stage without changing dry-etching conditions.