Presentation Information

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[11p-N102-4]Luminescence dynamics in GaN crystals grown by Quartz-free hydride vaper phase epitaxy

〇Yuki Monnai¹, Fujikura Hajime², Konno Taichiro², Shota Kaneki², Koshi Sano¹, Shuhei Ichikawa^1,3, Kazunobu Kojima¹ (1.Grad. Sch. of Eng., The Univ. of Osaka, 2.Sumitomo Chemical Co. Ltd., 3.Research Center for UHVEM, The Univ. of Osaka)

Keywords:

gallium nitride,Photoluminescence,Quartz-free hydride vapor phase epitaxy

We have previously demonstrated that carbon impurities in n-type GaN crystals suppress the internal quantum efficiency (IQE) of near-band-edge emission. Furthermore, we have reported that the IQE exhibits little dependence on carbon concentration in GaN crystals grown by the quartz-free halide vapor phase epitaxy method, in which the point-defect concentration is significantly reduced. In this study, time-resolved photoluminescence measurements were performed on these GaN crystals to investigate the differences in emission dynamics associated with variations in carbon impurity concentration, and we report the results here.

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