The 87th JSAP Autumn Meeting 2026
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Session Details

Oral presentation15 Crystal Engineering : 15.4 III-V-group nitride crystals

[11p-N102-1~8]15.4 III-V-group nitride crystals

Fri. Sep 11, 2026 1:30 PM - 3:45 PM JST
Fri. Sep 11, 2026 4:30 AM - 6:45 AM UTC
N102 (First Year Education Bld. N Block)
1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[11p-N102-1]Analysis of Phonon Diffusion in GaN Thin Films Using Sub-Nanosecond Pump–Probe Raman Spectroscopy

〇(D)Yusuke Ishii1, Daisuke Iida2, Kazuhiro Ohkawa3, Yoshihiro Ishitani1 (1.Chiba Univ., 2.KAUST, 3.Mie Univ.)
1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[11p-N102-2]Cooling effect on excitonic system in GaN quantum well depending on exciton binding energy: advantage of extremely thin quantum wells

〇(M2)Teppei Maruyama1, Kensuke Oki1, Si Thu Hein1, Yoshihiro Isitani1 (1.Chiba Univ.)
2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)English Presentation

[11p-N102-3]Cooling of exciton-biexciton system focusing on excitonic transition processes: the advantage of AlN

〇(M2)SIThu Hein1, Kensuke Oki1, Teppei Maruyama1, Yoshihiro Ishitani1 (1.Chiba univ.)
2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[11p-N102-4]Luminescence dynamics in GaN crystals grown by Quartz-free hydride vaper phase epitaxy

〇Yuki Monnai1, Fujikura Hajime2, Konno Taichiro2, Shota Kaneki2, Koshi Sano1, Shuhei Ichikawa1,3, Kazunobu Kojima1 (1.Grad. Sch. of Eng., The Univ. of Osaka, 2.Sumitomo Chemical Co. Ltd., 3.Research Center for UHVEM, The Univ. of Osaka)
2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[11p-N102-5]Characterization of Monolithically Stacked RGB-Emission GaInN µLEDs
–Time-Resolved PL Measurements of Blue-Emission Ga0.84In0.16N QW Epilayers–

〇(D)Itsuki Shimbo1, Keisuke Takeya2, Motoaki Iwaya2, Atsushi A. Yamaguchi1 (1.Kanazawa Inst. Tech., 2.Meijo Univ.)
3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[11p-N102-6]Effects of LED Stacking on the Active Region and Device Characteristics of Monolithically Stacked GaInN LEDs

〇Keisuke Takeya1, Shimbo Itsuki2, Koko Fukushima1, Kazuya Takagi1, Takumi Tsukamoto1, Ren Takahashi1, Yoshinobu Suehiro1, Atsushi A. Yamaguchi2, Satoshi Kamiyama1, Tetsuya Takeuchi1, Motoaki Iwaya1 (1.Meijo Univ., 2.Kanazawa Inst. Tech.)
3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[11p-N102-7]Systematic evaluation of emission efficiencies in triangular- and honeycomb-latticed InGaN nanocolumn arrays

〇Neo Nakayama1, Kousuke Natori1, Kyohei Koseki1, Jumpei Yamada2,3, Rie Togashi3,4, Katsumi Kishino4, Takao Oto1 (1.Yamagata Univ., 2.Keio Univ., 3.Sophia Nanotech., 4.Sophia Univ.)
3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[11p-N102-8]Cathodoluminescence Study of the Correlation Between Local Surface Morphology and Luminescence Properties in High-Al-Content Single-Layer AlGaN

〇Koki Yoshikawa1, Zentaro Akase1, Kazunori Iwamitsu1, Ryota Akaike2, Hideto Miyake2, Shigetaka Tomiya1 (1.NAIST, 2.Mie Univ)
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