Presentation Information

[11p-N102-5]Characterization of Monolithically Stacked RGB-Emission GaInN µLEDs
–Time-Resolved PL Measurements of Blue-Emission Ga0.84In0.16N QW Epilayers–

〇(D)Itsuki Shimbo1, Keisuke Takeya2, Motoaki Iwaya2, Atsushi A. Yamaguchi1 (1.Kanazawa Inst. Tech., 2.Meijo Univ.)

Keywords:

InGaN quantum well,Micro LEDs,Time-resolved PL measurement

Monolithically stacked RGB-emission GaInN µLEDs are promising candidates for micro-display applications. However, the degradation of the I-V-L characteristics of blue-emitting GaInN QWs caused by the stacking of upper QWs has been reported. In this study, time-resolved PL measurements were employed to evaluate the crystalline quality of blue-emitting GaInN QWs and to elucidate the mechanism responsible for the I-V-L degradation.