[11p-N304-1~11] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)English Presentation

[11p-N304-5] Frequency-dependent field cycling for imprint recovery in ultra-thin Hf_0.5Zr_0.5O₂ ferroelectric capacitors

〇(M2)TINGYU LIU¹, LIU ZHENHONG¹, Ito Kosuke¹, JIN ZHAO¹, Takagi Shinichi², Takenaka Mitsuru¹, Kasidit Toprasertpong¹ (1.The University of Tokyo, 2.Teikyo University)

Keywords:

Ferroelectric,Imprint recovery,Wake-up

In this work, we examine the recovery characteristics of imprint under field cycling with different cycling frequencies in a 4.7 nm-thick Hf_0.5Zr_0.5O₂(HZO) ferroelectric capacitor. Both wake-up and imprint recovery exhibit an optimal frequency of field cycling around 100 Hz~1 kHz. This behavior can be observed for the recovery of both conventional imprint and imprint under net-zero-polarization state. The results suggest that wake-up and imprint recovery follow the similar underlying mechanism related to ion migration.