The 87th JSAP Autumn Meeting 2026
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Session Details

Oral presentation13 Semiconductors : 13.4 Si processing /Si based thin film / MEMS / Equipment technology

[11p-N304-1~11]13.4 Si processing /Si based thin film / MEMS / Equipment technology

Fri. Sep 11, 2026 1:30 PM - 4:30 PM JST
Fri. Sep 11, 2026 4:30 AM - 7:30 AM UTC
N304 (First Year Education Bld. N Block)
1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[11p-N304-1]Metal work function on semiconductors (III)

〇Akira Toriumi1, Tomonori Nishimura2 (1.None, 2.Univ. Tokyo)
1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[11p-N304-2]Oxygen-induced changes in contact properties at the AlSi/Si substrate interface and restoration of ohmic properties by heat treatment.

〇Shinji Kimura1, Morimitsu Tanaka1, Hiroshi Inagawa1, Seiji Muranaka1 (1.Renesas)
2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[11p-N304-3]Dopant activation in high-Sn-composition Ge1-xSnx layers by pulsed laser annealing

〇Taehan KIM1, Shigehisa Shibayama1, Ryoji Katsube1, Noritaka Usami1,2,3, Mitsuo Sakashita1, Masashi Kurosawa1, Osamu Nakatsuka1,2 (1.Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.InFuS, Nagoya Univ.)
2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[11p-N304-4]Ultra-low Schottky barrier height exhibited in CaGe2/n-Ge(111) contact

〇Shigehisa Shibayama1, Ryoma Yukitake1, Mitsuo Sakashita1, Masashi Kurosawa1, Osamu Nakatsuka1,2 (1.Nagoya Univ., 2.IMaSS, Nagoya Univ.)
2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)English Presentation

[11p-N304-5]Frequency-dependent field cycling for imprint recovery in ultra-thin Hf0.5Zr0.5O2 ferroelectric capacitors

〇(M2)TINGYU LIU1, LIU ZHENHONG1, Ito Kosuke1, JIN ZHAO1, Takagi Shinichi2, Takenaka Mitsuru1, Kasidit Toprasertpong1 (1.The University of Tokyo, 2.Teikyo University)
2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[11p-N304-6]A New Method of Device Structure and Fabrication Process of Double and Multi Junction Solar Cells

〇Yoshiaki Hagiwara1, Shin-ichi Kobayashi2, Yoji Kawasaki3, Kikuyo Ishikawa4 (1.LOCOMTEC, 2.Tokyo Polytech Univ, 3.Sumitomo HMMS, 4.Davinci Brains)
3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[11p-N304-7]Effect of Fluorine Surface Coating on Output Characteristics of Droplet Flow-Induced Power Generation Using Native Oxide-Covered Cr/PET Substrates

〇(M1C)Yoka Shu1, Shin-ichi Warisawa1, Reo Kometani1 (1.Univ. of Tokyo, GSFS)
3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[11p-N304-8]Investigation of a Method for Extracting Candidate Defective Regions in TSV Cross Sections Based on Analysis of IR-OBIRCH Measurement Data

〇Yujiro Takehara1, Naoki Mizutani2, Takurou Kouno3, Yasuo Terasawa3, Fumito Imura4, Ichiro Akai5, Toru Aonishi6, Takeshi Hashishin2 (1.GSST, Kumamoto Univ., 2.FAST, Kumamoto Univ., 3.NIDEK Co., Ltd., 4.Hundred Semiconductors Inc., 5.IINA, Kumamoto Univ., 6.GSFS, Univ. of Tokyo.)
3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[11p-N304-9]Application of the Agile-X Platform to Mega-Scale LSI Development Based on a Unified Yield-Reliability Model and EDA Feedback

〇Hirofumi Sumi1, Atsutake Kosuge1, Hideharu Amano1, Naonobu Shimamoto1, Yukinori Ochiai1, Shinji Tsuboi1, Tohru Mogami1, Yoshio Mita1, Makoto Ikeda1 (1.Systems Design Lab., UTokyo)
4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[11p-N304-10]RF-LDMOS Development on a 65nm RF-SOI Foundry Platform

〇Naoki Nakada1, Masayuki Kamei1, Masao Shindo1, Hiroaki Kuriyama1, Yuichi Kurimoto1, Naoki Fukushima1, Shigeyuki Ohno1 (1.TPSCo)
4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[11p-N304-11]Heat Balance Analysis of Si Wafer Heating in a Microwave Cavity

〇Satoshi Fujii1,2, Hanae Yoshida1, Togo Yoshikawa1, Masahiko Ogura2, Makino Toshiharu2, Hiromitsu Kato2, Akira Uedono3 (1.N.I.T, Okinawa Col, 2.AIST, 3.Tsukuba Univ.)
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