[8a-A13-1~13] 6.3 Oxide electronics

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[8a-A13-1] [The 60th Young Scientist Presentation Award Speech] Complete strain relaxation of Ti₂O₃ films using multilayered hexagonal boron nitride

〇Keitaro Kanno¹, Takuto Soma¹, Satoru Fukamachi², Hiroki Ago², Daisuke Okuyama³, Akira Ohtomo¹, Kohei Yoshimatsu¹ (1.Science Tokyo, 2.Kyushu Univ., 3.KEK-IMSS)

Keywords:

transition metal oxide,metal-insulator transition,hBN

Bulk Ti₂O₃ exhibits a metal-insulator transition (MIT) at 450 K, whereas epitaxial strain reduces the transition temperature of Ti₂O₃ films on Al₂O₃(0001) substrates below room temperature. Previously, we reported strain relaxation using hBN transferred on SiO₂. In this study, we synthesized Ti₂O₃ films on hBN transferred on Al₂O₃(0001) substrates and successfully achieved bulk-like lattice constants and MIT temperatures.