Presentation Information

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8a-A31-5]Optimization of Thermal-Diffusion Doping Conditions for the Fabrication of Large Fe:ZnSe Crystals

〇Ishihara Shunto¹, Matsumoto Keiko¹, Okazaki Daiki¹, Kirita Yuri¹, Suzuki Anna¹, Yasuhara Ryo², Tokita Shigeki¹ (1.ICR, Kyoto Univ., 2.NIFS)

Keywords:

Fe:ZnSe,thermal-diffusion doping,mid-infrared

Toward the fabrication of large Fe:ZnSe crystals, Fe thin films were formed on ZnSe substrates, and the conditions for thermal-diffusion doping were investigated. The Fe2+ concentration increased with increasing Fe film thickness, indicating that the film thickness can serve as a control parameter for the Fe2+ concentration. In addition, the fraction of supplied Fe contributing to Fe2+ doping was evaluated as an apparent effective Fe fraction. This fraction was approximately 50% for the 154 h annealing condition, whereas it decreased with prolonged annealing. These results provide a guideline for concentration design in this doping method.

Back to Session information