[8a-A33-1~11] 17.1 Growth, Assembly, Structure control

11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[8a-A33-11] Large Area Lateral Alignment of WS₂ Nanotubes Enabled by Epitaxial Nanowire Templates

〇(M2)Hongyun Yao¹, Ena Hayama¹, Sayuki Oka^1,2, Kazuki Nagashima^1,2, Hiromichi Ohta^1,2, Yohei Yomogida^1,2 (1.Graduate School of Chemical Sciences and Engineering, Hokkaido University., 2.Nanotechnology Center, Research Institute for Electronic Science.)

Keywords:

Transition metal dichalcogenide

WS2 nanotubes are promising for electronic and optoelectronic applications, where alignment is crucial because random orientation degrades device performance. However, large-area, uniform alignment of WS2 nanotubes has not yet been achieved. Since WS2 nanotubes are synthesized by sulfurization of WOx nanowire templates, aligned nanotubes require aligned WOx nanowires. Here, we focus on lattice mismatch with the substrate, a key parameter in oxide epitaxial growth. By using substrates with different lattice constants, we find that LaAlO3 (110) most effectively promotes unidirectional epitaxial growth of WOx nanowires. The obtained WOx nanowires are converted into aligned WS2 nanotubes while retaining their alignment. Cross-sectional TEM and X-ray diffraction confirm uniform alignment over centimeter-scale areas, and the nematic order parameter of ~0.99 indicates near-perfect alignment. These results provide general design guidelines for aligned transition metal dichalcogenide nanotubes and open a pathway toward future electronic and optoelectronic applications.