The 87th JSAP Autumn Meeting 2026
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Session Details

Oral presentation17 Nanocarbon and Two-Dimensional Materials : 17.1 Growth, Assembly, Structure control

[8a-A33-1~11]17.1 Growth, Assembly, Structure control

Tue. Sep 8, 2026 9:00 AM - 12:00 PM JST
Tue. Sep 8, 2026 12:00 AM - 3:00 AM UTC
A33 (Faculty of Info. Sci. & Tech. Bldg.)
9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[8a-A33-1]CVD-MoS2 film formation from PVD-Mo film via oxygen and sulfur-vapor anneals

〇Shunsuke Nozawa1, Naoki Matsunaga1, Jaehyo Jang1, Takuya Hoshii1, Kuniyuki Kakushima1, Hitoshi Wakabayashi1 (1.Science Tokyo)
9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[8a-A33-2]PVD-MoS2 channel FET device using Ar post-anneal

〇Naoki Matsunaga1, JAEHYO JANG1, Shunsuke Nozawa1, Taiga Fuse1, Soma Ito1, Hitoshi Wakabayashi1 (1.Science Tokyo)
9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8a-A33-3]Wafer-scale Fabrication of Multi-layer MoS2 Thin Film

〇Myeongok Kim1, Okada Yoshitaka1 (1.RCAST, UTokyo)
9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8a-A33-4]Site-Selective Fabrication and Characterization of MoS2 by Vacuum Heating of S/MoO3 Thin-Firm Microstructures

〇Koki Nakane1, Kazusi Inoue1, Taketo Kikuchi1, Yui Aruga1, Kazuhisa Sueoka1, Subagyo Agus1 (1.Graduate School of IST, Hokkaido Univ)
10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8a-A33-5]Evaluation of 3D Structure Coverage of WS2 Thin Films by Atomic Layer Deposition

〇Minori Kaneko1, Sota Higashi1, Hideaki Machida2, Masato Ishikawa2, Hiroshi Sudoh2, Hitoshi Wakabayashi3, Naomi Sawamoto1,4, Atsushi Ogura1,4 (1.School of Sci. and Tech., Meiji Univ., 2.Gas-phase Growth Ltd., 3.Science Tokyo, 4.Meiji Renewable Energy Laboratory, Meiji Univ.)
10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8a-A33-6]Evolution of epitaxial orientation with growth time in monolayer WS2 on sapphire substrates

〇Shunnosuke Murakami1,2, Ryotaro Sakakibara1, Ryutaro Nishino3, Naoya Okada3, Toshifumi Irisawa3, Yasumitsu Miyata1,2 (1.NIMS, 2.Tokyo Metro. Univ., 3.AIST)
10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)English Presentation

[8a-A33-7]Quality Enhancement and Carbon Byproduct Suppression in MOCVD Growth of Monolayer WSe2

〇(PC)Wenjin Zhang1, Yuta Sawai1,2, Ryotaro Sakaibara1, Takahiko Endo1, Yasumitsu Miyata1,2 (1.NIMS, 2.Tokyo Metro. Univ.)
11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[8a-A33-8]X-ray CTR Scattering Analysis of the Monolayer MoS2/Sapphire Interface Structure

〇Tetsuroh Shirasawa1, Takahiro Nagata2, Yoshiki Sakuma2 (1.AIST, 2.NIMS)
11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8a-A33-9]Quasi-aligned Growth and Crystal/Electrical Characterization of Flat-Surfaced WxOy Nanowires from Na2WO4/WO3 Precursor Films as Templates for WS2 Growth

〇Ikuho Kanesaki1, Ryosei Ito1, Yasuhiko Hayashi1, Suzuki Hiroo1 (1.Okayama Univ.)
11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8a-A33-10]Analysis of ripple-induced friction anisotropy domains and crystal orientation visualization in monolayer MoS2 by lateral force microscopy

〇Kosei Matsumoto1, Tomonori Nishimura1, Kaito Kanahashi1, Yoshiki Sakuma2, Kosuke Nagashio1 (1.UTokyo, 2.NIMS)
11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[8a-A33-11]Large Area Lateral Alignment of WS2 Nanotubes Enabled by Epitaxial Nanowire Templates

〇(M2)Hongyun Yao1, Ena Hayama1, Sayuki Oka1,2, Kazuki Nagashima1,2, Hiromichi Ohta1,2, Yohei Yomogida1,2 (1.Graduate School of Chemical Sciences and Engineering, Hokkaido University., 2.Nanotechnology Center, Research Institute for Electronic Science.)
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