[8a-E204-1~5] 2.2 Radiation generators, Detector development, Measurement technology

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[8a-E204-3] Detection of X-ray using superconducting tunnel junction detector on Silicon-On-Insulator wafer

〇Shigetomo Shiki¹, Go Fujii¹ (1.AIST)

Keywords:

superconducting detector,Silicon-on-insulator,phonon

Aiming to realize a highly sensitive and high-resolution X-ray detector by combining a superconducting tunnel junction detector with a silicon pixel absorber, a prototype STJ using a silicon-on-insulator (SOI) substrate was fabricated, with a view to using the BOX layer of the SOI substrate as an etch stop in the future. The STJ was evaluated by irradiation with Al-K line (1.5 keV). Successful X-ray detection using the device layer as an absorber was achieved, and high phonon collection efficiency was realized.