[8a-E218-1~11] 13.6 Nanostructures, quantum phenomena, and nano quantum devices

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[8a-E218-3] Effect of internal electric fields on control of photoluminescence spectral shape in a stacked GaAs/AlAs multiple quantum wells

〇Takeharu Shirai¹, Osamu Kojima¹, Matthew Steer², Richard Hogg^2,3 (1.Chiba Inst. Tech., 2.Univ. of Glasgow, 3.Aston Univ.)

Keywords:

GaAs/AlAs multiple quantum wells,Excitonic photoluminescence,Carrier diffusion

In this study, we aimed to clarify the effect of carrier diffusion driven by the internal electric field on the spectral shape. In the photoluminescence spectra of three GaAs/AlAs multiple quantum wells with different well widths embedded in a p–i–n structure, the excitonic emission intensities from the individual quantum wells were found to differ between surface and edge excitation. Because the same trend was observed under various excitation power densities, the observed difference is attributed to carrier transport from the surface excitation region to the quantum wells.