Session Details

[8a-E218-1~11]13.6 Nanostructures, quantum phenomena, and nano quantum devices

Tue. Sep 8, 2026 9:00 AM - 12:00 PM JST
Tue. Sep 8, 2026 12:00 AM - 3:00 AM UTC
E218 (First Year Education Bld. E Block)

[8a-E218-1]Effects of miniband formation on terahertz wave radiation in semiconductor superlattices

〇Takayuki Hasegawa1, Tomoki Den1, Akira Fujimoto1 (1.Osaka Inst. Technol.)

[8a-E218-2]Origin of free carrier for exciton response in a GaAs/AlAs multiple quantum well

〇Osamu Kojima1, Kousuke Nakanishi1, Xu Jiaming1, Matthew Steer2, Richard Hogg2,3 (1.Chiba Inst. Tech, 2.Univ. of Glasgow, 3.Aston Univ.)

[8a-E218-3]Effect of internal electric fields on control of photoluminescence spectral shape in a stacked GaAs/AlAs multiple quantum wells

〇Takeharu Shirai1, Osamu Kojima1, Matthew Steer2, Richard Hogg2,3 (1.Chiba Inst. Tech., 2.Univ. of Glasgow, 3.Aston Univ.)

[8a-E218-4]Avoided Crossing between Fabry–Pérot Modes and quasi-BIC Plasmonic Modes in a Babinet Complementary Metal Mesh Structure

Shuhei Matsuyama1, 〇(B)Miyuu Matsunaga1, Yasuyuki Sakanaka1, Yoshinori Shohmitsu2, Takehiko Wada3, Toyoaki Suzuki4, Toshihiro Nakaoka1 (1.Sophia Univ., 2.QUP/KEK, 3.NAOJ, 4.ISAS/JAXA)

[8a-E218-5]Symmetry-protected BIC at the Γ point and its symmetry-breaking-induced Fano resonance in a Babinet complementary metal mesh structure

〇(B)YASUYUKI SAKANAKA1, SHUHEI MATSUYAMA1, MIYUU MATSUNAGA1, MASAHIRO UEDA1, YOSHINORI SHOHMITSU2, TAKEHIKO WADA4, TOYOAKI SUZUKI3, TOSHIHIRO NAKAOKA1 (1.Sophia Univ., 2.QUP, 3.JAXA, 4.NAOJ)

[8a-E218-6]Narrowband Fabry–Pérot Modes Enabled by a Babinet Complementary Thick Metal Mesh Structure

〇(M1)Shuhei Matsuyama1, Masahiro Ueda1, Yasuyuki Sakanaka1, Miyuu Matsunaga1, Yoshinori Shohmitsu2, Toyoaki Suzuki3, Takehiko Wada4, Toshihiro Nakaoka1 (1.Sophia Univ., 2.QUP, 3.JAXA, 4.NAOJ)

[8a-E218-7]Temperature-Dependent Photoluminescence Decay Time Properties of InAs/InGaAlAs/InP Quantum Dot Ensembles with Different Areal Densities

〇(M2)Sora KAWAMOTO Kawamoto1,2, Kouich Akahane2, Shinya Yamada2, Satoshi Shinada2, Tomohiro Maeda1,2, Hideyuki Sotobayashi1 (1.Aogaku Univ., 2.NICT)

[8a-E218-8]Evaluation of Photoluminescence Spectra and Carrier Lifetimes in InGaN/GaN Quantum Dots by Temperature-Dependent Time-Resolved Photoluminescence

〇Riku Iwasaki1, Yuto Nakama1, Koshiro Arai1, Katsuki Sato1, Yuta Nakayama1, Atsushi Tackeuchi1, Ying Gong2, Wenxian Yang2, Shulong Lu2 (1.Waseda Univ., 2.SINANO)

[8a-E218-9]Effect of the Number of Stacked Layers on the Time-Resolved Photoluminescence Properties of Green-Emitting InGaN/GaN Quantum Dots

〇Koshiro Arai1, Yuto Nakama1, Riku Iwasaki1, Alexander Zades1, Katsuki Sato1, Yuta Nakayama1, Atsushi Tackeuchi1, Gong Ying2, Yang Wenxian2, Lu Shulong2 (1.Waseda Univ., 2.SINANO)

[8a-E218-10]Temperature Dependence of Electron Spin Relaxation Time in GaAs/AlGaAs (110) Quantum Wells

〇Fuminari Tsuboi1, Taiyo Yamamoto1, Satoshi Iba2, Yuzo Ohno1,2 (1.Univ. of Tsukuba, 2.AIST)

[8a-E218-11]Experimental evaluation of the Dresselhaus coefficient in (110) GaAs/AlGaAl quantum wells from room-temperature spin relaxation

〇Taiyo Yamamoto1, Fuminari Tsuboi1, Satoshi Iba2, Yuzo Ohno1,2 (1.Univ. of Tsukuba, 2.AIST)