Presentation Information

10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8a-N101-6]Carrier recombination dynamics in blue InGaN/GaN LEDs with extremely high quantum efficiency

〇Yuuho Andou¹, Shuhei Ichikawa^1,2, Kazunobu Kojima¹ (1.The Univ. of Osaka, 2.Research Center for UHVEM, The Univ. of Osaka)

Keywords:

InGaN,photoluminescence,Nitride

Time-resolved photoluminescence measurements were performed on InGaN/GaN multi-quantum wells for extremely high-EQE LEDs. The carrier lifetime was significantly longer than previously reported values and increased monotonically with temperature. The observed temperature dependence is consistent with the radiative lifetime model of free excitons, suggesting excitonic recombination near room temperature.

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