Session Details

[8a-N101-1~11]15.4 III-V-group nitride crystals

Tue. Sep 8, 2026 9:00 AM - 12:00 PM JST
Tue. Sep 8, 2026 12:00 AM - 3:00 AM UTC
N101 (First Year Education Bld. N Block)
Chair : Atsushi Yamaguchi(Kanazawa Inst. of Tech.), Daichi Imai(Meijo Univ.)

[8a-N101-1]Excitation Power Dependence of Time-Resolved Photoluminescence in Green-Emitting InGaN/GaN Quantum Dots

〇Yuto Nakama1, Riku Iwasaki1, Katsuki Sato1, Koshiro Arai1, Yuta Nakayama1, Atsushi Tackeuchi1, Ying Gong2, Wenxian Yang2, Shulong Lu2 (1.Waseda Univ., 2.SINANO)
Comment()

[8a-N101-2]The effect of AlGaN interlayer on Time-resolved photoluminescence properties of InGaN/GaN Quantum dots

〇Katsuki Sato1, Yuto Nakama1, Riku Iwasaki1, Zades Alexander1, Koshiro Arai1, Yuta Nakayama1, Ying Gong2, Wenxian Yang2, Shulong Lu2, Atsushi Tackeuchi1 (1.Waseda Univ., 2.SINANO)
Comment()

[8a-N101-3]Effect of Nanowire Height on Emission Uniformity in GaInN/GaN Multi-Quantum Shell Structures

〇Haruki Sawazaki1, Takuya Takahashi1, Kouki Yamada1, Hiroki Teshima1, Haruki Hotta1, Himari Suzuki1, Koichi Naniwae2, Kazumasa Niwa2, satoshi Kamiyama1, Tetsuya Takeuchi1, Motoaki Iwaya1 (1.MeijoUniversity, 2.E&E Evolution Co.LTD)
Comment()

[8a-N101-4]Excitation-Intensity Dependence of Emission Characteristics in InGaN MQW Nanostripe Structures

〇Seiichi Kataoka1, Akihiko Kikuchi1,2 (1.Sophia Univ., 2.Sophia Semiconductor Research inst.)
Comment()

[8a-N101-5]Exciton dynamics and emission efficiencies in InGaN nanopillars with different crystalline qualities

〇Yoshito Watanabe1, Hikaru Yokosawa1, Shunya Kosuge1, Seiichi Kataoka2, Akihiko Kikuchi2,3, Takao Oto1 (1.Yamagata Univ., 2.Sophia Univ., 3.Sophia Semicon.)
Comment()

[8a-N101-6]Carrier recombination dynamics in blue InGaN/GaN LEDs with extremely high quantum efficiency

〇Yuuho Andou1, Shuhei Ichikawa1,2, Kazunobu Kojima1 (1.The Univ. of Osaka, 2.Research Center for UHVEM, The Univ. of Osaka)
Comment()

[8a-N101-7]PL Lifetime spectral mapping measurement for InGaN quantum wells

〇Soma Hatanaka1, Atsushi A. Yamaguchi1, Kazunori Iwamitsu2, Shigetaka Tomiya2 (1.Kanazawa Inst. Tech., 2.NAIST)
Comment()

[8a-N101-8]Investigation of the Factors Governing PL Decay Curves in InGaN Quantum Wells

〇Arata Suzaki1, Itsuki Shimbo1, Atsushi A. Yamaguchi1, Kazunori Iwamitsu2, Shigetaka Tomiya2 (1.Kanazawa Inst. Tech., 2.NAIST)
Comment()

[8a-N101-9]Carrier Lifetime Estimation in InGaN Quantum Wells by Intensity-Modulated Optical Excitation

〇Soya Yamagishi1, Atsushi.A Yamaguchi1, Shigetaka Tomiya2 (1.Kanazawa Inst.Tech., 2.NAIST)
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[8a-N101-10]Carrier Diffusion Measurement in InGaN QWs Using TRPL Measurements with a Confocal System

〇Yuta Sakurai1, Osuke Ito1, Atsushi A. Yamaguchi1, Rintaro Koda2 (1.Kanazawa Inst. Tech., 2.Sony Semiconductor Solutions Corp.)
Comment()

[8a-N101-11]Spatial Luminescence Characterization of InGaN SQW and Underlayer-Inserted SQW Using Cathodoluminescence Spectral Imaging II

〇(M2)Daichi Tsujii1, Ryunosuke Fuku1, Zentaro Akase1, Kazunori Iwamitsu1, Shigetaka Tomiya1 (1.NAIST)
Comment()