Session Details

[8a-N101-1~11]15.4 III-V-group nitride crystals

Tue. Sep 8, 2026 9:00 AM - 12:00 PM JST
Tue. Sep 8, 2026 12:00 AM - 3:00 AM UTC
N101 (First Year Education Bld. N Block)

[8a-N101-1]Excitation Power Dependence of Time-Resolved Photoluminescence in Green-Emitting InGaN/GaN Quantum Dots

〇Yuto Nakama1, Riku Iwasaki1, Katsuki Sato1, Koshiro Arai1, Yuta Nakayama1, Atsushi Tackeuchi1, Ying Gong2, Wenxian Yang2, Shulong Lu2 (1.Waseda Univ., 2.SINANO)

[8a-N101-2]The effect of AlGaN interlayer on Time-resolved photoluminescence properties of InGaN/GaN Quantum dots

〇Katsuki Sato1, Yuto Nakama1, Riku Iwasaki1, Zades Alexander1, Koshiro Arai1, Yuta Nakayama1, Ying Gong2, Wenxian Yang2, Shulong Lu2, Atsushi Tackeuchi1 (1.Waseda Univ., 2.SINANO)

[8a-N101-3]Effect of Nanowire Height on Emission Uniformity in GaInN/GaN Multi-Quantum Shell Structures

〇Haruki Sawazaki1, Takuya Takahashi1, Kouki Yamada1, Hiroki Teshima1, Haruki Hotta1, Himari Suzuki1, Koichi Naniwae2, Kazumasa Niwa2, satoshi Kamiyama1, Tetsuya Takeuchi1, Motoaki Iwaya1 (1.MeijoUniversity, 2.E&E Evolution Co.LTD)

[8a-N101-4]Excitation-Intensity Dependence of Emission Characteristics in InGaN MQW Nanostripe Structures

〇Seiichi Kataoka1, Akihiko Kikuchi1,2 (1.Sophia Univ., 2.Sophia Semiconductor Research inst.)

[8a-N101-5]Exciton dynamics and emission efficiencies in InGaN nanopillars with different crystalline qualities

〇Yoshito Watanabe1, Hikaru Yokosawa1, Shunya Kosuge1, Seiichi Kataoka2, Akihiko Kikuchi2,3, Takao Oto1 (1.Yamagata Univ., 2.Sophia Univ., 3.Sophia Semicon.)

[8a-N101-6]Carrier recombination dynamics in blue InGaN/GaN LEDs with extremely high quantum efficiency

〇Yuuho Andou1, Shuhei Ichikawa1,2, Kazunobu Kojima1 (1.The Univ. of Osaka, 2.Research Center for UHVEM, The Univ. of Osaka)

[8a-N101-7]PL Lifetime spectral mapping measurement for InGaN quantum wells

〇Soma Hatanaka1, Atsushi A. Yamaguchi1, Kazunori Iwamitsu2, Shigetaka Tomiya2 (1.Kanazawa Inst. Tech., 2.NAIST)

[8a-N101-8]Investigation of the Factors Governing PL Decay Curves in InGaN Quantum Wells

〇Arata Suzaki1, Itsuki Shimbo1, Atsushi A. Yamaguchi1, Kazunori Iwamitsu2, Shigetaka Tomiya2 (1.Kanazawa Inst. Tech., 2.NAIST)

[8a-N101-9]Carrier Lifetime Estimation in InGaN Quantum Wells by Intensity-Modulated Optical Excitation

〇Soya Yamagishi1, Atsushi.A Yamaguchi1, Shigetaka Tomiya2 (1.Kanazawa Inst.Tech., 2.NAIST)

[8a-N101-10]Carrier Diffusion Measurement in InGaN QWs Using TRPL Measurements with a Confocal System

〇Yuta Sakurai1, Osuke Ito1, Atsushi A. Yamaguchi1, Rintaro Koda2 (1.Kanazawa Inst. Tech., 2.Sony Semiconductor Solutions Corp.)

[8a-N101-11]Spatial Luminescence Characterization of InGaN SQW and Underlayer-Inserted SQW Using Cathodoluminescence Spectral Imaging II

〇(M2)Daichi Tsujii1, Ryunosuke Fuku1, Zentaro Akase1, Kazunori Iwamitsu1, Shigetaka Tomiya1 (1.NAIST)