Presentation Information
[8a-PA2-19]Development of GaN Semiconductor Detectors for Low-Energy X-ray Imaging
〇Yuki Shinmura1, Katsuyuki Takagi3, Hiroki Kase2,4, Toru Aoki1,2,4, Fumimasa Horikiri5, Hiroshi Ohta5, Tomoaki Nishimura5, Hyun-Jae Lee6, Sunny Kim6, Joung-Hun Shin6 (1.Shizuoka Univ. G.S.I.S.T., 2.Shizuoka Univ. Inf., 3.Shizuoka Univ. Eng., 4.Shizuoka Univ. R.I.E., 5.Hosei Univ. RCIBT, 6.BTOZ Co.LTD)
Keywords:
radiation detector,gallium nitride
In this study, we focused on GaN as a material for low-energy X-ray detectors and fabricated MSM-type detectors with varying carbon concentrations. Evaluation results confirmed a low dark current of approximately 10^-9 A and stable operation when a voltage of 100 V was applied. Furthermore, samples with high carbon concentrations exhibited a fast X-ray response, suggesting their potential for use in imaging sensor applications.