Presentation Information
[8a-PA2-9]Development of an In-Situ Evaluation System for the Electrical Characteristics of Semiconductor Devices Under Charged Particle Beam Irradiation
〇(B)Toki Takishita1, Shintaro Ishihara1, Yukimune Uchida1, Kosei Suzuki1, Sho Toyama1, Wataru Kada1, Shigeo Matsuyama1 (1.Tohoku Univ)
Keywords:
semiconductor,radiation resistance,in-situ measurement
In this study, we established an environment capable of real-time measurement of the electrical characteristics of semiconductor devices whilst they were being irradiated with charged particles from a 1 MV tandem accelerator. Using a control programme based on the Analog Discovery 2, voltage and current characteristics were automatically recorded at regular intervals to evaluate changes in semiconductor parameters resulting from the irradiation.