[8a-PB2-1~32] 12.3 Functional Materials and Novel Devices

[8a-PB2-32] Fabrication of inverted Core-Shell type QD-EL with vacuum deposited hole transport layer

〇Riki Masui¹, Yuki Minakawa¹, Eiji Itoh¹ (1.Shinshu Univ.)

Keywords:

quantum dots,light emitting device,vacuum deposition

We fabricated QD-EL devices with ITO/ZnO/PEIE/QD(CdSe/ZnS)/TCTA/α-NPD/MoO₃/Ag structure using a combination of coating processes and vacuum deposition, and analyzed the device’s J-V-L and C-V characteristics.