Presentation Information
[8a-PB3-2]Modulation of Electron Trap in Silicon Nitride films by Hydrogen Plasma Treatment
〇Tsubasa Nishihara1, Kiyokazu Nakagawa1, Yuichiro Mitani1 (1.Tokyo City Univ.)
Keywords:
semiconductor,Hydrogen Plasma Treatment,electron trap
It has been pointed out that hydrogen in silicon nitride films shallows trap levels and accelerates the lateral diffusion of charges. In this study, aiming to control the hydrogen content, hydrogen plasma treatment was performed on a SiO2/SiN stacked structure. As a result of calculating the electron trap levels from J-E characteristics using Poole–Frenkel analysis, it clearly deepened from 1.2eV for the untreated to 1.6eV after irradiation, demonstrating the modulation effect of trap characteristics due to the dissociation of hydrogen bonds.