Presentation Information
[8a-PB3-5]Study on degradation of pMOSFETs and nMOSFETs under Cryogenic Temperature
〇Aito Suzuki1, Yuichiro Mitani1 (1.Tokyo City Univ.)
Keywords:
semiconductor,cryogenic,fixed charge
In recent years, Cryo-CMOS technology has become increasingly important in fields such as quantum computing. However, the degradation mechanisms of transistors at cryogenic temperatures have not yet been fully clarified. In this study, we investigate the difference in degradation of nMOSFETs and pMOSFETs under electrical stress, focusing on the degradation of their Id–Vg characteristics. The underlying mechanism is discussed based on the relationship between the generated interface trap density and the generated fixed charge density, using both experimental data and device simulations.