Presentation Information
[8a-PB4-2]Impact of mesa-structure steepness on electrical characteristics of p-Ge1-xSnx/n-Ge diode
〇Kei Yamamoto1, Shigehisa Shibayama1, Sakashita Mitsuo1, Masashi Kurosawa1, Osamu Nakatsuka1,2 (1.Grad. Sch. Eng., Nagoya Univ., 2.IMaSS, Nagoya Univ.)
Keywords:
device structure,p-n diode