The 87th JSAP Autumn Meeting 2026
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Session Details

Poster presentation13 Semiconductors : 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[8a-PB4-1~8]13.5 Semiconductor devices/ Interconnect/ Integration technologies

Tue. Sep 8, 2026 11:00 AM - 12:30 PM JST
Tue. Sep 8, 2026 2:00 AM - 3:30 AM UTC
PB4 (2nd Gymnasium)

[8a-PB4-1]Performance enhancement of GeSn-based RTD by improving interface flatness

〇Shigehisa Shibayama1, Shota Torimoto1, Mitsuo Sakashita1, Masashi Kurosawa1, Osamu Nakatsuka1,2 (1.Nagoya Univ., 2.IMaSS, Nagoya Univ.)

[8a-PB4-2]Impact of mesa-structure steepness on electrical characteristics of p-Ge1-xSnx/n-Ge diode

〇Kei Yamamoto1, Shigehisa Shibayama1, Sakashita Mitsuo1, Masashi Kurosawa1, Osamu Nakatsuka1,2 (1.Grad. Sch. Eng., Nagoya Univ., 2.IMaSS, Nagoya Univ.)

[8a-PB4-3]barrier thickness dependence of between peak to valley current ratio and endurance in room temperature negative differential resistance of p type si caf2 resonant tunneling diodes

〇Yuji Ishikawa1, Igari syu1, Kobayashi Takahiro1, Goto Kaito1, Watanabe Masahiro1 (1.Science Tokyo)

[8a-PB4-4]Influences of Al2O3 substrate orientation and temperature on the epitaxial growth of Ru thin film

〇Haruki Tomioka1, Kosuke Imamura1, Satoshi Tsuneizumi1, Naoki Isogai1, Tomoya Nakatani2, Mitsuru Ohtake1 (1.Yokohama Nat. Univ., 2.NIMS)

[8a-PB4-5]Study on epitaxial growth conditions for Cu3N thin films by reactive sputtering

〇Karin Kubota1, Kosuke Imamura1, Satoshi Tsuneizumi1, Naoki Isogai1, Mitsuru Ohtake1 (1.Yokohama Nat. Univ.)

[8a-PB4-6]Thermal desorption spectroscopy of IGZO films using the band gap monitoring system

〇Natsumi Aoki1, Kenshi Kimoto1, Kiyoteru Kobayashi1 (1.ESCO)
English Presentation

[8a-PB4-7]High Temperature Operation and Reliability at 400oC of CMOS Operational Amplifier Circuits based on 4H-SiC

〇(D)Anh Dung Nguyen1, Kazutoshi Kojima2, Seiji Ishikawa1,3, Tomonori Maeda1,3, Hiroshi Sezaki1,3, Shin-Ichiro Kuroki1 (1.RISE, Hiroshima Univ, 2.AIST, 3.Phenitec Semiconductor Corp)
English Presentation

[8a-PB4-8]4H-SiC Neutron Sensors for Boron Neutron Capture Therapy

〇(D)Ha Thi Vu1, Tatsuya Meguro1, Kazutoshi Kojima2, Hiroki Tanaka3, Shin-Ichiro Kuroki1 (1.RISE, Hiroshima Univ., 2.AIST, 3.KURNS, Kyoto Univ.)
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