Presentation Information
[8a-PB4-8]4H-SiC Neutron Sensors for Boron Neutron Capture Therapy
〇(D)Ha Thi Vu1, Tatsuya Meguro1, Kazutoshi Kojima2, Hiroki Tanaka3, Shin-Ichiro Kuroki1 (1.RISE, Hiroshima Univ., 2.AIST, 3.KURNS, Kyoto Univ.)
Keywords:
4H-SiC Neutron sensors,BNCT,4T-APS
In this study, 4H-SiC neutron sensors based on 4T-APS structure for BNCT were designed, fabricated and tested under UV light. A pinned photodiode (PPD) structure and an additional p+ interlayer were designed for neutron sensor region. Because neutrons have no electric charge, a large neutron conversion layer (NCL) of 500 µm x 500 µm was formed on the PPD by 10B ions implantation into Al layer. After the fabrication process was completed, the prototypes have been tested under ultraviolet (UV) light. The output voltage characteristics in dark and under UV light have demonstrated the functional operation of the 4T-APS structure of SiC neutron sensors.