[8a-S2-1~11] 3.13 Silicon photonics, Photonics-electronics convergence, Optical control

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[8a-S2-3] Memory operation of III-V/Si hybrid MOS phase shifter using oxide semiconductor FET

〇Tomohiro Akazawa¹, Xuanhedong Gao¹, Hanzhi Tang¹, Kasidit Toprasertpong¹, Mitsuru Takenaka¹ (1.Univ. of Tokyo)

Keywords:

Si photonics,Optical phase shifter,Oxide semiconductor

Si programmable photonic integrated circuits (PICs) are attracting attention for applications in communications and computing. To further enhance PIC performance, a wide variety of optical phase shifters based on different operating principles have been proposed; however, most of these are volatile and require a continuous power supply to maintain the phase shift. Furthermore, the realization of an N × N PIC requires O(N²) electrical wiring, which presents a challenge for scalability. In contrast, non-volatile phase shifters can retain the phase shift amount without a continuous power supply, thereby reducing static power consumption and enabling significant simplification of phase shifter control. In this study, we report the demonstration of memory operation with long-term retention characteristics by driving a highly efficient n-InGaAsP/Si hybrid MOS phase shifter using an oxide semiconductor MOSFET, which features an extremely low leakage current and can be fabricated using a Back-End-Of-Line (BEOL) compatible process.