[8a-S2-1~11] 3.13 Silicon photonics, Photonics-electronics convergence, Optical control

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8a-S2-5] Fabrication of Hf_0.5Zr_0.5O₂ Optical Waveguides Using CHF₃-RIE toword Nonvolatile Optical Phase Shifters

〇(DC)Satoshi Fujiya¹, Yudai Katsura¹, Takahiro Tsukamoto¹, Hideo Isshiki¹ (1.Univ. of Electro-Communications)

Keywords:

Ferroelectric HZO,Nonvolatile optical phase shifter,Reactive ion etching

Ferroelectric Hf_0.5Zr_0.5O₂ (HZO) is a promising material for nonvolatile optical phase shifters. However, HZO is a difficult-to-etch material because of its strong chemical bonding with oxygen and the low volatility of Hf and Zr halides. In this study, HZO optical waveguides were fabricated by CHF₃-based reactive ion etching (RIE). A high etching rate of 43.3 nm/min, smooth sidewalls, and good shape stability after O₂ annealing at 400°C were confirmed. These results indicate that CHF₃-RIE is an effective processing technique for expanding the design flexibility of photonic integrated circuits using HZO-based nonvolatile optical phase shifters.