Presentation Information
[8p-A13-10]Suppression of Charge Transfer in LaTiO3/LaVO3 Strongly Correlated Heterointerfaces
〇Takuto Soma1, Yeong Woo Kim2, Kodai Niitsu3, Soungmin Bae4, Kohei Yoshimatsu2, Hiroshi Kumigashira1, Akira Ohtomo2 (1.Tohoku Univ., 2.Science Tokyo, 3.NIMS, 4.Yokohama City Univ.)
Keywords:
epitaxial growth,perovskite oxide,two-dimenmensinal electron gas
Oxide heterointerfaces have been the subject of a vast number of studies as platforms for the emergence of novel physical properties, including charge transfer. However, compared to band insulators, Mott insulator/band insulator, and metal/insulator interfaces, studies on Mott insulators interfaces remain scarce. Interfacial charge transfer can be predicted using principles based on band alignments and first-principles calculations. Through such predictions, the formation of an interfacial two-dimensional electron gas, among other phenomena, has been theoretically proposed at the interface between the Mott insulators LaTiO3 and LaVO3. Nevertheless, despite the simplicity of this system, no experimental studies have been reported to date. Therefore, in this study, we fabricated LaTiO3/LaVO3 heterostructures and investigated their interfacial electronic states.