[8p-A13-1~10] 6.3 Oxide electronics

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8p-A13-3] Evaluation of Depletion Capacitance–Voltage Characteristics
at (La_1-xSr_x) VO₃/n-Si Heterojunctions

〇(M2)Koji Iwasaki¹, Ryosuke Takagi¹, Togo Kuroki¹, Kaito Hujitani¹, Yasushi Hotta¹ (1.Hyogo Univ.)

Keywords:

transition metal oxide,strongly correlated electron systems,silicon

Hybrid devices integrating strongly correlated electron systems (SCES), which exhibit rich physical properties, with Si are expected to provide enhanced functionality and performance. However, carrier transport at the junction interface, which is crucial for device operation, has not yet been fully understood. To address this issue, we resolved the interfacial oxidation problem and fabricated junctions between the SCES material (La_1-xSr_x)VO₃ and n-type Si substrates. The depletion-layer formation was evaluated by C–V measurements. The results revealed suppression of depletion-layer expansion, suggesting the presence of an interfacial barrier that inhibits minority-carrier injection.