[8p-A13-1~10] 6.3 Oxide electronics

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8p-A13-4] Effects of N and Cu Doping on p-type NiO_x Films

〇Mana Shibata¹, Minseok Kim¹, Yuki Oguchi², Shiun Inoue³, Aruto Akatsuka⁴, Ryotaro Nakazawa⁴, Hiroyuki Yoshida⁴, Hisao Ishii⁴, Yusuke Maeyama⁵, Toshiyuki Takemori⁵, Takeshi Yamaguchi⁵, Akihiko Shibukawa⁵, Yuzo Shigesato¹ (1.Aoyama Gakuin Univ., 2.Center for Instrumental Analysis, Aoyama Gakuin Univ., 3.GSSE Chiba Univ., 4.GSE Chiba Univ., 5.Shindengen Electric Manufacturing Co., Ltd.)

Keywords:

Nickel oxide,p-type oxide film,Thermal stability

NiO is a representative p-type oxide semiconductor, but its hole concentration is caused by the formation of Ni vacancies and interstitial oxygen, making its electrical properties sensitive to thermal treatment. In this study, non-doped and Cu-doped NiO thin films were deposited on quartz substrates by RF magnetron sputtering. By varying the O₂ flow ratio (0-20 %), the resistivity reached a minimum at 10 % due to an increase in hole concentration. After vacuum annealing at 400 degrees Celsius, non-doped NiO exhibited XRD peak shifts toward higher angles and a transition to insulating behavior, attributed to defect annihilation. In contrast, Cu-doped NiO (Cu: 5 at. %) showed no significant peak shift, indicating suppressed structural changes. These results demonstrate that Cu doping enhances the thermal stability of NiO.