[8p-A21-1~18] 6.4 Thin films and New materials

1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[8p-A21-1] [Invited Talk] Improving the operating temperature and enhancing the performance of GeSn/GeSiSn resonant tunnel diodes

〇Shota Torimoto¹, Shuto Ishimoto¹, Yoshiki Kato¹, Mitsuo Sakashita¹, Masashi Kurosawa¹, Osamu Nakatsuka^1,2, Shigehisa Shibayama¹ (1.Grad. Sch. of Eng., Nagoya Univ., 2.IMaSS, Nagoya Univ.)

Keywords:

Resonant tunneling diode,GeSn,GeSiSn