[8p-B21-1~10] (Public Symposium) Advanced Logic Semiconductors: From Si-GAA to CFET and Beyond

2:35 PM - 3:05 PM JST(5:35 AM - 6:05 AM UTC)

[8p-B21-4] Recent Advances and Challenges in Two-Dimensional Materials for Next-Generation Semiconductor Devices

〇Yasumitsu Miyata¹ (1.NIMS)

Keywords:

two-dimensional material,transition metal dichalcogenide

In this presentation, we will review recent research trends in transition metal dichalcogenides (TMDs), which are representative two-dimensional semiconductors, and discuss the challenges toward their application in next-generation semiconductor devices. We will also introduce our recent research results on growth techniques, heterojunction formation, structural and physical-property characterization, and atomic-level materials control.