[8p-B21-1~10] (Public Symposium) Advanced Logic Semiconductors: From Si-GAA to CFET and Beyond

3:35 PM - 4:05 PM JST(6:35 AM - 7:05 AM UTC)

[8p-B21-6] TCAD Simulations of Transistors with Novel Structures and Materials

〇Akiko Ueda¹ (1.AIST)

Keywords:

TCAD simulations,two-dimensional semiconductors,Multi-scale simulations

In emerging transistors for the angstrom node, material properties and structural complexity dominate carrier transport, making conventional TCAD approaches insufficient for accurate analysis. In this talk, a multiscale simulation framework integrating first-principles calculations, quantum transport, and Boltzmann transport equation-based methods is presented. Furthermore, in novel-material transistors, particularly those based on two-dimensional semiconductors, the impact of interfaces between contacts or gate oxides and semiconductors on transport properties is elucidated, and the development of TCAD models that incorporate these effects is discussed.