Presentation Information
[8p-C310-2]Acceleration of Rabi Oscillations between Upper Two Levels in NV Electron Spin in Diamond by Applying a Strong Perpendicular Magnetic Field
〇(D)Ryusei Okaniwa1,2, Yuichiro Matsuzaki3, Rui Suzuki1,2, Norio Tokuda4, Junko Ishi-Hayase1,2 (1.Keio Univ., 2.Keio CSRN, 3.Chuo Univ., 4.Kanazawa Univ. ARCDia)
Keywords:
quantum sensor,nitrogen-vacancy center in diamond,strong transverse magnetic field
NV-based magnetic field sensors are highly valued for their high sensitivity and spatial resolution. While conventional methods utilize eigenstates under a static magnetic field parallel to the NV axis, the states |+1> and |-1> cannot induce magnetic field transitions. In contrast, applying a static magnetic field perpendicular to the NV axis creates a superposition of the upper two levels, |+> and |->, which can interact with magnetic fields.
Although a pulsed sensing method utilizing the |+> and |-> states promises higher sensitivity than the continuous-wave approach, previous attempts failed to accelerate Rabi oscillations; the small energy gap of 10 MHz caused a breakdown of the rotating wave approximation under strong driving fields. To overcome this limitation, this study applies a stronger perpendicular magnetic field to widen the energy gap and accelerate Rabi oscillations. This approach aims to enhance quantum state control speed, enabling higher-frequency and higher-sensitivity pulsed magnetic field sensing.
Although a pulsed sensing method utilizing the |+> and |-> states promises higher sensitivity than the continuous-wave approach, previous attempts failed to accelerate Rabi oscillations; the small energy gap of 10 MHz caused a breakdown of the rotating wave approximation under strong driving fields. To overcome this limitation, this study applies a stronger perpendicular magnetic field to widen the energy gap and accelerate Rabi oscillations. This approach aims to enhance quantum state control speed, enabling higher-frequency and higher-sensitivity pulsed magnetic field sensing.
