Presentation Information
[8p-E204-4]Investigation of Detector Response Dependence on X-ray Interaction Position in X-ray SOI Pixel Detector "XRPIX"
〇Shunsei Anzai1, Siga Fumiya1, Hikaru Sato1, Moeno Nakatani1, Sayumi Fujita1, Takayoshi Kohmura1, Yusuke Uchida2, Ikuo Kurachi3, Kouichi Hagino4, Hiroumi Matsuhashi4, Riki Sato4, Kenji Shimazoe4, Kanta Nagai4, Takeshi Tsuru5, Yusuke Komura5, Hikaru Uebayashi5, Koji Mori6, Ayaki Takeda6, Hiromaza Suzuki6, Maito Indo6, Maya Shimoto6, Yume Hayano6, Mizuki Uenomachi7 (1.Tokyo Univ. of Sci., 2.ISAS/JAXA, 3.D&S, 4.The Univ. of Tokyo., 5.Kyoto Univ, 6.Univ. of Miyazaki, 7.Science Tokyo)
Keywords:
semiconductor,X-ray
In the development of the next-generation Silicon-On-Insulator (SOI) pixel detector "XRPIX" for X-ray astronomy, we evaluated the factors causing an approximately 1.4% downward shift in the peak position (5.89 keV) during backside-illumination operation—which is essential for high quantum efficiency—compared to frontside-illumination. The analysis quantitatively revealed two primary causes: signal loss to adjacent pixels due to charge cloud diffusion (approximately 0.8%), and the energy non-linearity of the Charge Sensitive Amplifier (CSA) circuit (approximately 0.4%). Furthermore, we confirmed that the contribution of charge loss within the backside dead layer is negligibly small.