[8p-E207-1~17] 10.4 Spintronics in semiconductor, topological material, superconductor, and multiferroics

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[8p-E207-5] Perpendicular magnetic anisotropy in MgO/CoFeB heterostructures on GaAs(110)

〇Hikaru Sakata¹, Taro Aizawa¹, Satoshi Iba², Yuzo Ohno^1,2 (1.Univ. of Tsukuba, 2.AIST)

Keywords:

semiconductor spintronics

In GaAs(110) quantum wells, relaxation of the out-of-plane spin component is significantly suppressed, making spin injection using ferromagnetic electrodes with perpendicular magnetization effective. MgO/CoFeB heterostructures exhibit highly spin-polarized tunneling and interface-induced perpendicular magnetic anisotropy (PMA) on GaAs(001); however, PMA has rarely been reported on GaAs(110). In this study, we clarified the interfacial conditions that induce PMA in MgO/CoFeB on GaAs(110), providing important insights toward the realization of perpendicular spin injection devices for (110)-oriented semiconductor systems.