[8p-E207-1~17] 10.4 Spintronics in semiconductor, topological material, superconductor, and multiferroics

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[8p-E207-6] Annealing-temperature dependence of magnetic anisotropy in MgO/CoFeB heterostructures on GaAs(110)

〇(M1)Taro Aizawa¹, Hikaru Sakata¹, Yuzo Ohno^1,2, Satoshi Iba² (1.Tsukuba Univ., 2.AIST)

Keywords:

Semiconductor Spintronics

The realization of spin-LEDs based on GaAs(110) quantum wells requires ferromagnetic electrodes with perpendicular magnetization. In this study, we investigated the annealing-temperature dependence of perpendicular magnetic anisotropy (PMA) in MgO/CoFeB heterostructures fabricated on GaAs(110). Magnetic measurements after annealing at 250, 300, and 350°C revealed that PMA appeared only for the sample annealed at 300°C. This behavior is attributed to temperature-dependent interfacial processes such as CoFeB crystallization, B diffusion, and structural modification at the interface. The factors governing PMA formation will be discussed in detail.