Presentation Information
[8p-E219-2]Magnetocapacitance Spectroscopy of Valley Splitting in Silicon
〇Jinichiro Noborisaka1, Hiroshi Irie1, Toshiaki Hayashi1, Gento Yamahata1 (1.Basic Research Labs., NTT, Inc.)
Keywords:
valley splitting,silicon,capacitance spectroscopy
We have previously reported the emergence of large valley splitting in MOS transistors fabricated on SIMOX substrates, a type of Si-on-insulator substrate, based on current transport measurements. In this measurement approach, however, factors such as interface scattering associated with transport may affect the results. In contrast, capacitance spectroscopy enables direct observation of the density of states and is therefore expected to allow quantitative evaluation without the influence of transport-related effects. In this study, we attempted to evaluate valley splitting using capacitance spectroscopy.