Presentation Information
[8p-E219-4]Self-Aligned Sub-1 nm Nanogap Formation via Shadow Evaporation Assisted Electromigration during Evaporation
〇Shumpei Funada1, Hiroshi Suga1, Hisashi Shima2, Yasuhisa Naitoh2 (1.Chiba Tech, 2.AIST)
Keywords:
nanogap electrode
In conventional nanogap formation using the electromigration (EMEV) method, substrate damage caused by heat generation during the process has been a significant issue. In this study, we propose the "s-EMEV" method, which combines oblique angle deposition with the EMEV technique. By utilizing the sidewall of the base structure as a mask for self-aligned gap formation, the structural change region is spatially separated from the substrate, thereby suppressing thermal effects. Experimental results demonstrated a significant reduction in the abrupt current drops and extensive film ruptures typical of conventional methods, proving its effectiveness as a low-damage process for forming sub-1 nm nanogaps.