Presentation Information

5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8p-F212-14]Control of Forgetting Characteristics in Memory Devices Based on Single-Molecule Electret

〇(DC)Masaki Arima¹, Kazushi Takeda¹, Rikuto Tamatani¹, Yuki Nakano², Chisato Kato², Jun Manabe¹, Masaru Fujibayashi³, Takayoshi Nakamura¹, Sadafumi Nishihara^1,4 (1.Grad. Sch. Adv. Sci. Eng. Hiroshima Univ., 2.Materialgate Inc., 3.NIT, Ube College, 4.CResCent, Hiroshima Univ.)

Keywords:

Ferroelectrics,Single-molecule electret,Memory devices

In this study, we fabricated a field-effect transistor-type memory device using a Preyssler-type polyoxometalate, a single-molecule electret, to reproduce the analog and forgetting characteristics observed in brain memory functions. By applying positive and negative pulsed gate voltages, the drain current increased and decreased stepwise, demonstrating the potential for bidirectional control of analog memory states based on the polarization response of the single-molecule electret.

Back to Session information